858 Process Flow With Exp F18 Training Essay

Submitted By tmacartney
Words: 4861
Pages: 20

858
Process Flow

858 Process Flow

Agenda:






Transistor Overview
Fab area overview
858 process flow
Fab tour - Optional

858 Process Flow

Transistor
Overview
Fab-18, Training

Basic Terms
• Atom - The smallest division of an element.
• The basic components of an atom are:
• Protons - positive charge (“+”)
• Electrons - negative charge (“-”)
• Neutrons - no charge
• An object is negatively charged when there are more electrons then protons.
• An object is positively charged when there are

Conductor - A material that has atomic structure which permit rapid movement of free electrons.
Insulators - A materials that has all his electrons are tightly held to the nucleus of the atom and present considerable resistance.
Semiconductors - With the right power control the material can be use as conductor or as isolator.
Current - Movement of electrons (from “-” to “+”).
Note - The current direction is always in the opposite to the electrons direction.

Build the wafer
• Made out from quartz which contained in send.
• In thermal process we melting and distilled the sand.
• A mono crystal seed is inserted into the melted silicon, and as the seed rotates in the melted silicon, a crystal is grows.
• The process takes few days and then it’s slowly extracted and we ending with 5 foot-long ingot of Silicon.
• Cutting the ingot to wafers.

Phosphors/Arsenic Atom
5 Electrons

Silicon Atom

Nuclear

4 Electrons
Nuclear

Boron/Indium Atom
3 Electrons
Nuclear

Silicon wafer structure
Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Si

Silicon wafer after Arsenic implant
Si

Si

Si

Si

Si

Si

Si

Si

As

Si

Si

Si

Si

Si

Si

Si

Si

Si

Silicon wafer after Boron implant
Si

Si

Si

Si

Si

Si

Si

Si

Bo

Si

Si

Si

Si

Si

Si

Si

Si

Si

PN Junction

P

N

P

N

Duplication Area

Forward Bias
V+

N

P
Reverse Bias

P

N

V+

N type Transistors

V+
P

N

V+
N

P Well

858 Process Flow

Fab area overview Fab-18, Training

858 Process Flow

Coat

Expose

Develop

Resist
Wafer

Wafer

Wafer

Link
1
2

Nikon/Micrascan
Litho

3

S.V.G
Fab-18, Training

858 Process Flow
• MS2 (MicraScan) - DUV & SVG
NWL, PWL, NTP, PTP, VA1, MT2, VA2, MT3,VA3

• Iline (B11/B12) - Nikon & SVG
NSD, PSD, MT4, VA4, MT5, VA5, MT6

• Polyimide (B9) - Nikon & SVG
Tab Pad (PAD WB)

• MS3 (MicraScan) or EXX (Nikon)
Poly, STR, Metal 1, Con

Litho

Fab-18, Training

858 Process Flow
Target

Power On/Of
Gas
Supply

CVD Chamber

Gas box

Plasma
Shower
Head

Ar
N2
Wafer

Heated Pedestal

Wafer

PVD
Thin Films

CVD
Fab-18, Training

858 Process Flow
• AMAT 5000
STI, ILD0, ILD0 CAP, Passiavation, Hard mask.

• AMAT 5500 (Sputter)
Metal 1-6, COBaH (Salicide)

• AMAT 5500 (ADH)
Adhesion 1-6

• NOVELLUS
Tungsten 1-6

• HDP
ILD 1-5

Thin Films

Fab-18, Training

858 Process Flow

POWERED ELECTRODE

Etch
By Acid
RF

1
Etch
By Plasma

Resist

2

3
GROUND ELECTRODE

Dry Etch
Etch

Wafer

Wet Etch
Fab-18, Training

858 Process Flow

DRY ETCH
Gasonic
Asher

LRC
Pad, Nitride, Poly, STR

Hitachi
Metal

TEL

WET ETCH
AWB
Resist removal, Tox preclean, Sacox preclean,
Gate preclean, Nit

AWS
Resist removal, Via,
Anchor

Oxide

Etch

Fab-18, Training

858 Process Flow

Tube

Process
Gasses

ATM VDF

Oxide
Silicon Dioxide






Temp
Pressure
Gases
Time

Exhaus t LPCVD VDF

Deposit
Layer

Wafer

Oxidation

Difusion

Wafer

Deposition
Fab-18, Training

858 Process Flow
• Atmospheric VDF
PADOX, TSOX, SACOX, GATE OX (GT13),
Tean (Anneal).

• LPCVD VDF
NITR, POLY, SPTE Ox, BTSP

• Cure
Pad Cure
• RTA
Thermal Anneal.

Difusion

Fab-18, Training

858 Process Flow

Magnet

N

Magnet
GAS

Filament
Magnet

S

Accelerator
Decelerator

Lenses

1 Die

Amat XR-80 / Varian E500
Implant

Fab-18, Training

858 Process Flow

• Amat XR80 - Low and high current
Tips, Source, Drain

• Varian E500 - Medium current
Halo, N-Well, P-Well

Implant

Fab-18, Training

858 Process Flow

P

P

N

N Well

N

P Well

BEFORE POLISH
N Well
P

P Well
P

N

N

Pad
POLISH
P…